HYB39L256160AC Datasheet, PDF (39/48 Pages) Infineon Technologies AG – 256 MBit Synchronous Low-Power DRAM

HYB 39L256160AC / T
256MBit 3.3V Mobile-RAM
16. Random Column write (Page within same Bank)
16.1 CAS Latency = 2
Burst Length = 4, CAS Latency = 2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t _CK2
CKE
CS
RAS
CAS
WE
BS
AP
RBw
RBz
Addr.
RBw
CBw
CBx
CBy
RBz
CBz
DQM
Hi Z
DQ
DBw0 DBw1 DBw2 DBw3 DBx0 DBx1 DBy0 DBy1 DBy2 DBy3
DBz0 DBz1 DBz2 DBz3
Activate W rite
Command Command
Bank B Bank B
W rite
W rite
Command Command
Bank B Bank B
Precharge Activate R ead
Command Command Command
Bank B Bank B Bank B
SPT03923_2
INFINEON Technologies AG
39
2002-12-20