HYB39L256160AC Datasheet, PDF (25/48 Pages) Infineon Technologies AG – 256 MBit Synchronous Low-Power DRAM

HYB 39L256160AC / T
256MBit 3.3V Mobile-RAM
7. Burst Write and Read with Auto Precharge
7.1 Burst Write with Auto-Precharge
(Burst Length = 2, CAS latency = 2, 3 )
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
CAS Latency = 2:
Com m and
Bank A
A c tiv e
DQ 's
CAS Latency = 3:
C om m and
Bank A
A c tiv e
D Q 's
NOP
W rite A
Auto Precharge
NOP
NOP
tWR
DIN A0 DIN A1
NOP
*
NOP
tRP
A c tiv a te
NOP
NOP
NOP
W rite A
Auto Precharge
NOP
NOP
tWR
DIN A0 DIN A1
NOP
*
NOP
tRP
NOP
A ctivate
* ^{Begin Auto Precharge}
B ank can be reactivated after trp
SPT03909_2
7.2 Burst Read with Auto-Precharge
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
C om m and
Read A
with AP
CAS
latency = 2
D Q 's
CAS
latency = 3
D Q 's
NOP
NOP NOP NOP NOP NOP
*
t_RP
DOUT A0 DOUT A1 DOUT A2 DOUT A3
NOP
*
tRP
DOUT A0 DOUT A1 DOUT A2 DOUT A3
* ^{Begin Auto Precharge}
B ank can be reactivated after trp
NOP
SPT03721_2
INFINEON Technologies AG
25
2002-12-20