TLE82453-3SA_15 Datasheet, PDF (24/71 Pages) Infineon Technologies AG – 3 Channel High-Side and Low-Side Linear Solenoid Driver IC

7.5
Electrical Characteristics Power Stages
TLE82453-3SA
Power Stages
Table 6 Electrical Characteristics: Power Stages
V_BAT = 8 V to 17 V, V_DDx = 4.75 V to 5.25 V, T_j = -40 °C to +150 °C, all voltages with respect to ground (GNDD),
positive current flowing into pin (unless otherwise specified)
Parameter
Symbol
Min.
Values
Unit Note /
Number
Typ. Max.
Test Condition
LSUPx leakage current
I_{LSUP_LKG}
-150 –
150 µA set-point = 0mA P_7.6.1
8V < V_LSUP < V_BAT
+ 0.3V
LSUPx leakage current in
I_{LSUP_LG_SLP} -50
–
sleep mode
50
µA Sleep mode All P_7.6.2
VDDx=0V
On-State Resistance - high R_{DS(ON)_HS}
–
–
250 mΩ T_j = 150°C; I_LOAD P_7.6.3
side FET
= -1.6A
On-State Resistance - low R_{DS(ON)_LS}
–
–
250 mΩ T_j = 150°C; I_LOAD P_7.6.4
side FET
= 1.6A
LOADx leakage current
I_{LOAD_LKG}
-300 –
0
LOADx leakage current in
I_{LOAD_LKG_SLP} -80
–
80
sleep mode
Current rise and fall times - T_R0, T_F0,
–
1¹⁾
–
SR0
Current rise and fall times - T_R1, T_F1
–
0.5¹⁾ –
SR1
Current rise and fall times T_R2, T_F2
–
2¹⁾
–
Voltage slew rate SR0
–
5
–
µA set-point = 0mA P_7.6.5
8V < V_LSUP < V_BAT
+ 0.3V; 0V <
V_LOAD < V_LSUP
µA
P_7.6.6
µs
µs
µs
V/µs
I_LOAD = 1.4A; 8V
< V_LSUP < V_BAT +
0.3V; 20% to 80%
ΔI_LSUP & ΔI_GNDP
I_LOAD = 1.4A; 8V
< V_LSUP < V_BAT +
0.3V; 20% to 80%
ΔI_LSUP & ΔI_GNDP
I_LOAD = 1.4A; 8V
< V_LSUP < V_BAT +
0.3V; 20% to 80%
ΔI_LSUP & ΔI_GNDP
P_7.6.7
P_7.6.8
P_7.6.9
P_7.6.10
Voltage slew rate SR1
–
10
–
V/µs
P_7.6.11
Voltage slew rate SR2
–
2.5
–
V/µs
P_7.6.12
Current Sense Resistor
Sense resistor resistance
R_SENSE
–
1) Not subject to production test, specified by design.
250 380 mΩ
P_7.6.13
Data Sheet
-
24
Rev 1.0, 2015-03-27