HY29LV160 Datasheet, PDF (35/48 Pages) Hynix Semiconductor – 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory

AC CHARACTERISTICS
WE#
Enter Automatic
Erase
DQ[6]
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Erase
Suspend
Read
HY29LV160
Erase
Resume
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ[2]
Notes:
1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an
erase-suspended sector.
Figure 23. DQ[2] and DQ[6] Operation
In-System Sector Protect and Unprotect, Temporary Sector Unprotect
Parameter
JEDEC Std
Description
Speed Option
Unit
- 70 - 80 - 90 - 12
t_VIDR V_ID Transition Time for Temporary Sector Unprotect ¹ Min
500
ns
t_RSP
RESET# Setup Time for
Temporary Sector Unprotect
Min
4
µs
t_VRST
RESET# Setup Time for In-System Sector Protect
and Unprotect
Min
1
µs
t_PROT In-System Sector Protect Time
t_UNPR In-System Sector Unprotect Time
Max
150
µs
Max
15
ms
Notes:
1. Not 100% tested.
V _ID
RESET#
0 or 3V
t_VIDR
CE#
WE#
RY/BY#
Rev. 1.2/May 01
t_VIDR
t_RSP
Figure 24. Temporary Sector Unprotect Timings
0 or 3V
35