HY29LV160 Datasheet, PDF (31/48 Pages) Hynix Semiconductor – 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory

AC CHARACTERISTICS
HY29LV160
Program and Erase Operations
Parameter
JEDEC Std
Description
Speed Option
Unit
- 70 - 80 - 90 - 12
t_AVAV
t_AVWL
t_WLAX
t_DVWH
t_WHDX
t_GHWL
t_ELWL
t_WHEH
t_WLWH
t_WHWL
t_WC
t_AS
t_AH
t_DS
t_DH
t_GHWL
t_CS
t_CH
t_WP
t_WPH
Write Cycle Time ¹
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
t_WHWH1 t_WHWH1 Programming Operation ^{1, 2, 3}
Min 70 80 90 120 ns
Min
0
ns
Min 45 45 45 50 ns
Min 35 35 45 50 ns
Min
0
ns
Min
0
ns
Min
0
ns
Min
0
ns
Min 35 35 35 50 ns
Min
30
ns
Typ
9
µs
Byte Mode
Max
300
µs
Typ
18
µs
Word Mode
Max
500
µs
Typ
18
sec
Byte Mode
Max
54
sec
Chip Programming Operation ^{1, 2, 3, 5}
Typ
18
sec
Word Mode
Max
54
sec
t_WHWH2 t_WHWH2 Sector Erase Operation ^{1, 2, 4}
Typ
0.25
sec
Max
5
sec
t_WHWH3 t_WHWH3 Chip Erase Operation ^{1, 2, 4}
Erase and Program Cycle Endurance ¹
Typ
8
sec
Typ
1,000,000
cycles
Min
100,000
cycles
t_VCS V_CC Setup Time ¹
Min
50
µs
t_RB Recovery Time from RY/BY#
Min
0
ns
t_BUSY WE# High to RY/BY# Delay
Min
90
ns
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, V_CC = 3.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90 °C, V_CC = 2.7 volts (3.0 volts for - 70 version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 6 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
are programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes/words program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the
maximum byte/word program time specified is exceeded. See Write Operation Status section for additional information.
Rev. 1.2/May 01
31