HY29LV160 Datasheet, PDF (30/48 Pages) Hynix Semiconductor – 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory

HY29LV160
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
JEDEC Std
Description
t_ELFL
t_ELFH
t_FLQZ
t_FHQV
CE# to BYTE# Switching Low
CE# to BYTE# Switching High
BYTE# Switching Low to Output High-Z
BYTE# Switching High to Output Active
Speed Option
Unit
- 70 - 80 - 90 - 12
Max
5
ns
Max
5
ns
Max 25 25 30 30 ns
Min 70 80 90 120 ns
CE#
OE#
BYTE#
BYTE#
switching
from word to
DQ[14:0]
t_ELFL
byte mode
DQ[15]/A-1
Data Output DQ[14:0]
Data Output DQ[7:0]
Output DQ[15]
t_FLQZ
Address Input A-1
BYTE#
switching
from byte to
word mode
BYTE#
DQ[14:0]
DQ[15]/A-1
t_ELFH
Data Output DQ[7:0]
Address Input A-1
t_FHQV
Data Output DQ[14:0]
Data Output DQ[15]
Figure 17. BYTE# Timings for Read Operations
CE#
WE#
Falling edge of the last WE# signal
BYTE#
t_SET (t_AS)
t_HOLD (t_AH)
Note: Refer to the Program/Erase Operations table for t and t specifications.
AS
AH
Figure 18. BYTE# Timings for Write Operations
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Rev. 1.2/May 01