HY29LV160 Datasheet, PDF (19/48 Pages) Hynix Semiconductor – 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory

Table 8. CFI Mode: System Interface Data Values
Description
V_CC supply, minimum (2.7V)
V_CC supply, maximum (3.6V)
V_PP supply, minimum (none)
V_PP supply, maximum (none)
Typical timeout for single word/byte write (2^N µs)
Typical timeout for maximum size buffer write (2^N µs)
Typical timeout for individual block erase (2^N ms)
Typical timeout for full chip erase (2^N ms)
Maximum timeout for single word/byte write (2^N x Typ)
Maximum timeout for maximum size buffer write (2^N x Typ)
Maximum timeout for individual block erase (2^N x Typ)
Maximum timeout for full chip erase (not supported)
Word Mode
Address
Data
1B
0027
1C
0036
1D
0000
1E
0000
1F
0004
20
0000
21
000A
22
000F
23
0005
24
0000
25
0004
26
0000
HY29LV160
Byte Mode
Address
Data
36
27
38
36
3A
00
3C
00
3E
04
40
00
42
0A
44
0F
46
05
48
00
4A
03
4C
00
Table 9. CFI Mode: Device Geometry Data Values
Description
Device size (2^N bytes)
Flash device interface code (02 = asynchronous x8/x16)
Maximum number of bytes in multi-byte write (not
supported)
Number of erase block regions
Erase block region 1 information
[2E, 2D] = # of blocks in region - 1
[30, 2F] = size in multiples of 256-bytes
Erase block region 2 information
Erase block region 3 information
Erase block region 4 information
Word Mode
Address
Data
27
0015
28
0002
29
0000
2A
0000
2B
0000
2C
0004
2D
0000
2E
0000
2F
0040
30
0000
31
0001
32
0000
33
0020
34
0000
35
0000
36
0000
37
0080
38
0000
39
001E
3A
0000
3B
0000
3C
0001
Byte Mode
Address
Data
4E
15
50
02
52
00
54
00
56
00
58
04
5A
00
5C
00
5E
40
60
00
62
01
64
00
66
20
68
00
6A
00
6C
00
6E
80
70
00
72
1E
74
00
76
00
78
01
Rev. 1.2/May 01
19