H27U518S2CTR-BC Datasheet, PDF (33/37 Pages) Hynix Semiconductor – 512 Mb NAND Flash

1PrePreliminaryeee
H27U518S2C Series
512 Mbit (64 M x 8 bit) NAND Flash
Over the lifetime of the device additional Bad Blocks may develop. In this case the block has to be replaced by copying
the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will give
errors in the Status Register.
Unlike the case of odd page which carries a possibility of affecting previous page, the failure of a page program operation
does not affect the data in other pages in the same block, the block can be replaced by re-programming the current data
and copying the rest of the replaced block to an available valid block.
Refer to Table 17 and Figure 23 for the recommended procedure to follow if an error occurs during an operation.
Operation
Recommended Procedure
Erase
Block Replacement
Program
Block Replacement
Read
ECC (with 1bit/528byte)
Table 17 : Block Failure
Q^W^KSDJH
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%ORFN%

'DWD
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))K
'DWD
))K
Q^W^KSDJH
%XIIHUPHPRU\RIWKHFRQWUROOHU
Figure 23 : Bad Block Replacement
NOTE :
1. An error occurs on n^th page of the Block A during program or erase operation.
2. Data in Block A is copied to same location in Block B which is valid block.
3. N^th data of block A which is in controller buffer memory is copied into n^th page of Block B
4. Bad block table should be updated to prevent from eraseing or programming Block A
Write Protect Operation
Rev 1.0 / Dec. 2008
33