H27U518S2CTR-BC Datasheet, PDF (15/37 Pages) Hynix Semiconductor – 512 Mb NAND Flash

1PrePreliminaryeee
H27U518S2C Series
512 Mbit (64 M x 8 bit) NAND Flash
Parameter
Valid Block
Number
Symbol
Min
Max
NVB
4016
4096
Table 7 : Valid Block Numbers
NOTE
1. The 1st block is guaranteed to be a valid block at the time of shipment.
Unit
Blocks
Symbol
T_A
T_BIAS
T_STG
VIO⁽²⁾
Vcc
Parameter
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Table 8 : Absolute maximum ratings
Value
0 to 70
-40 to 85
-50 to 125
-65 to 150
-0.6 to 4.6
-0.6 to 4.6
Unit
℃
℃
℃
V
V
V
Note
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Rat-
ings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Ab-
solute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the Hynix SURE Pro-
gram and other relevant quality documents.
2. Minimum Voltage may undershoot to -2 V during transition and for less than 20 ns during transitions.
Rev 1.0 / Dec. 2008
15