H27U518S2CTR-BC Datasheet, PDF (17/37 Pages) Hynix Semiconductor – 512 Mb NAND Flash

1PrePreliminaryeee
H27U518S2C Series
512 Mbit (64 M x 8 bit) NAND Flash
Parameter
Symbol
Test Conditions
3.3Volt
Min
Typ
Operating
Current
Sequential
Read
Program
ICC1
tRC = 50 ns
CE = VIL, IOUT = 0 mA
-
15
ICC2
-
-
15
Erase
ICC3
-
-
15
Stand-by Current (TTL)
ICC4
CE=VIH,
WP = 0 V / Vcc
-
Stand-by Current (CMOS)
ICC5
CE = Vcc-0.2,
WP = 0V/Vcc
-
10
Input Leakage Current
ILI
VIN = 0 to Vcc (max)
-
-
Output Leakage Current
ILO
VOUT = 0 to Vcc (max)
-
-
Input High Voltage
VIH
-
0.8xVcc
-
Input Low Voltage
VIL
-
-0.3
-
Output High Voltage Level
VOH
IOH = - 400 uA
2.4
-
Output Low Voltage Level
VOL
IOL = 2.1 mA
-
-
Output Low Current (R/B)
IOL
(R/B)
VOL = 0.4 V
8
10
Vcc supply voltage (erase and
program) lockout
V_LKO
-
-
1.8
Table 9 : DC and Operation Characteristics
Max
30
30
30
1
50
± 10
± 10
Vcc+0.3
0.2xVcc
-
0.4
-
-
Unit
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
mA
V
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (1.7 V - 1.95 V)
Value
0 V to VCC
5 ns
V_CC / 2
1 TTL GATE and CL = 50pF
Table 10 : AC Conditions
Rev 1.0 / Dec. 2008
17