H27U518S2CTR-BC Datasheet, PDF (29/37 Pages) Hynix Semiconductor – 512 Mb NAND Flash

1PrePreliminaryeee
H27U518S2C Series
512 Mbit (64 M x 8 bit) NAND Flash
Rp _ibusy
Vcc
R/B
open drain output
Ready Vcc
VOL : 0.4V, VOH : 2.4V
VOL
Busy
GND
Device
tf
200n
100n
Fig. Rp vs tr, tf & Rp vs ibusy
@ Vcc = 3.3V, Ta = 25°C, CL=50pF
2.4
ibusy
1.2
200
150
100
50
1.8 _tf 1.8
0.8
0.6
1.8
1.8
Rp value guidence
1k
2k
3k
4k
Rp (ohm)
Rp (min) = ^{Vcc (Max.) - VOL (Max.)} =
IOL + ™,L
3.2V
P$™,L
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
VOH
tr
2m
1m
Figure 18 : Ready / Busy Pin Electrical Specifications
Rev 1.0 / Dec. 2008
29