GS81313LT18 Datasheet, PDF (16/29 Pages) GSI Technology – 144Mb SigmaDDR-IIIe™ Burst of 2 ECCRAM™

GS81313LT18/36GK-833/714/625
Output Electrical Characteristics
Parameter
Symbol
Min
Typ
DC Output High Voltage
V_OHdc
—
0.80 * V_DDQ
DC Output Low Voltage
V_OLdc
-0.15
0.20 * V_DDQ
AC Output High Voltage
V_OHac
—
0.80 * V_DDQ
AC Output Low Voltage
V_OLac
-0.25
0.20 * V_DDQ
Note:
1. “Typ” parameter applies when SRAM R_OUTH = 40 and Controller R_INH = R_INL = 120.
2. “Typ” parameter applies when SRAM R_OUTL = 40 and Controller R_INH = R_INL = 120.
3. Parameters apply to: CQ, CQ, DQ, QVLD.
Leakage Currents
Parameter
Symbol
Min
I_LI1
-2
Input Leakage Current
I_LI2
-20
I_LI3
-2
Output Leakage Current
I_LO
-2
Notes:
1. V_IN = V_SS to V_DDQ.
2. Parameters apply to CK, CK, KD, KD, SA, DQ, LD, R/W when ODT is disabled.
Parameters apply to MZT, PZT.
3. Parameters apply to PLL, TMS, TDI (weakly pulled up).
4. Parameters apply to RST, TCK (weakly pulled down).
5. V_OUT = V_SS to V_DDQ.
6. Parameters apply to CQ, CQ, DQ, QVLD, TDO.
Max
V_DDQ + 0.15
—
V_DDQ + 0.25
—
Units
V
V
V
V
Notes
1, 3
2, 3
1, 3
2, 3
Max
Units Notes
2
uA
1, 2
2
uA
1, 3
20
uA
1, 4
2
uA
5, 6
Rev: 1.13 7/2016
16/29
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2014, GSI Technology