MC33662LEF Datasheet, PDF (9/31 Pages) Freescale Semiconductor, Inc – LIN 2.1 / SAEJ2602-2, LIN Physical Layer

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics (continued)
Characteristics under conditions 7.0 V  V_SUP  18 V, - 40C  T_A  125C, GND = 0 V, unless otherwise noted. Typical
values reflect the approximate parameter means at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER - TRANSCEIVER LIN⁽⁶⁾
Operating Voltage Range⁽⁷⁾
Supply Voltage Range
Voltage Range (within which the device is not destroyed)
Current Limitation for Driver Dominant State
Driver ON, V_BUS = 18 V
V_BAT
8.0
–
18
V
V_SUP
7.0
–
18
V
V_{SUP_NON_OP}
-0.3
–
40
V
I_{BUS_LIM}
40
mA
90
200
Input Leakage Current at the Receiver
Driver off; V_BUS = 0 V; V_BAT = 12 V
I_{BUS_PAS_DOM}
-1.0
–
mA
–
Leakage Output Current to GND
I_{BUS_PAS_REC}
Driver Off; 8.0 V V_BAT  18 V; 8.0 V V_BUS  18 V; V_BUS  V_BAT;
–
V_BUS V_SUP
µA
–
20
Control Unit Disconnected from Ground⁽⁸⁾
GND_DEVICE = V_SUP; V_BAT = 12 V; 0 < V_BUS < 18 V
I_{BUS_NO_GND}
mA
-1.0
–
1.0
V_BAT Disconnected; V_{SUP_DEVICE} = GND; 0 V < V_BUS < 18 V⁽⁹⁾
Receiver Dominant State⁽¹⁰⁾
Receiver Recessive State⁽¹¹⁾
I_{BUSNO_BAT}
–
–
10
µA
V_BUSDOM
–
–
0.4
V_SUP
V_BUSREC
0.6
–
–
V_SUP
Receiver Threshold Center
(V_{TH_DOM} + V_{TH_REC})/2
V_{BUS_CNT}
V_SUP
0.475
0.5
0.525
Receiver Threshold Hysteresis
(V_{TH_REC} - V_{TH_DOM})
V_HYS
V_SUP
–
–
0.175
LIN dominant level with 500 680  and 1.0 k load on the LIN bus _{VLINDOM_LEVEL}
–
–
0.25
V_SUP
V_BAT_SHIFT
V_{SHIFT_BAT}
0
–
11.5%
V_BAT
GND_SHIFT
V_{SHIFT_GND}
0
–
11.5%
V_BAT
LIN Wake-up Threshold from Sleep Mode
V_BUSWU
–
4.3
5.3
V
LIN Pull-up Resistor to V_SUP
LIN Internal Capacitor⁽¹²⁾
Overtemperature Shutdown⁽¹³⁾
R_SLAVE
20
30
60
k
C_LIN
30
pF
T_LINSD
150
160
200
°C
Overtemperature Shutdown Hysteresis
T_{LINSD_HYS}
–
20
–
°C
Notes
6. Parameters guaranteed for 7.0 V V_SUP  18 V.
7. Voltage range at the battery level, including the reverse battery diode.
8. Loss of local ground must not affect communication in the residual network.
9. Node has to sustain the current that can flow under this condition. The bus must remain operational under this condition.
10. LIN threshold for a dominant state.
11. LIN threshold for a recessive state.
12. This parameter is guaranteed by process monitoring but not production tested.
13. When an overtemperature shutdown occurs, the LIN transmitter and receiver are in recessive state and INH switched off. This parameter
is tested with a test mode on ATE and characterized at laboratory.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33662
9