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MC33662LEF Datasheet, PDF (8/31 Pages) Freescale Semiconductor, Inc – LIN 2.1 / SAEJ2602-2, LIN Physical Layer | |||
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics
Characteristics under conditions 7.0 V ï£ VSUP ï£ 18 V, - 40ï°C ï£ TA ï£ 125ï°C, GND = 0 V, unless otherwise noted. Typical
values reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
VSUP PIN (DEVICE POWER SUPPLY)
Nominal Operating Voltage
Functional Operating Voltage(5)
Load Dump
Power-On Reset (POR) Threshold
VSUP Ramp Down and INH goes High to Low
VSUP
7.0
13.5
18.0
V
VSUPOP
6.7
â
27
V
VSUPLD
â
â
40
V
VPOR
V
3.5
â
5.3
Power-On Reset (POR) Hysteresis
VSUP Undervoltage Threshold (positive and negative)
Transmission disabled and LIN bus goes in recessive state
VPORHYST
â
270
â
mV
VUVL, VUVH
V
5.8
â
6.7
VSUP Undervoltage Hysteresis (VUVL - VUVH)
Supply Current in Sleep Mode
VSUP ï£ 13.5 V, Recessive State
13.5 V < VSUP < 27 V
VSUP ï£ 13.5 V, Shorted to GND
VUVHYST
â
130
â
mV
ïA
IS1
â
6.0
11
IS2
â
â
20
IS3
â
24
70
Supply Current in Normal or Slow or Fast Mode
Bus Recessive, Excluding INH Output Current
Bus Dominant, Excluding INH Output Current
RXD OUTPUT PIN (LOGIC)
mA
IS(REC)
â
4.0
6.0
IS(DOM)
â
6.0
8.0
Low Level Output Voltage
IIN ï£ 1.5 mA
VOL
V
0
â
0.9
High Level Output Voltage
VEN = 5.0 V, IOUT ï£ 250 ïA
VEN = 3.3 V, IOUT ï£ 250 ïA
VOH
V
4.25
â
5.25
3.0
â
3.5
TXD INPUT PIN (LOGIC)
Low Level Input Voltage
High Level Input Voltage
Input Threshold Voltage Hysteresis
Pull-up Current Source
VEN = 5.0 V, 1.0 V < VTXD < 3.5 V
VIL
â
â
0.8
V
VIH
2.0
â
â
V
VINHYST
100
300
600
mV
IPU
ïA
- 60
- 35
- 20
EN INPUT PIN (LOGIC)
Low Level Input Voltage
VIL
â
â
0.8
V
High Level Input Voltage
VIH
2.0
â
â
V
Input Voltage Threshold Hysteresis
VINHYST
100
400
600
mV
Pull-down Resistor
RPD
100
230
350
kohm
5. For the functional operating voltage, the device is functional and all features are operating. The electrical parameters are noted under
conditions 7.0 V ï£ï VSUP ï£ï 18ï V, -40oC ï£ï TA ï£ï 125o C, GND = 0 V.
33662
8
Analog Integrated Circuit Device Dataï
Freescale Semiconductor
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