MC33662LEF Datasheet, PDF (10/31 Pages) Freescale Semiconductor, Inc – LIN 2.1 / SAEJ2602-2, LIN Physical Layer

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics (continued)
Characteristics under conditions 7.0 V  V_SUP  18 V, - 40C  T_A  125C, GND = 0 V, unless otherwise noted. Typical
values reflect the approximate parameter means at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
INH OUTPUT PIN
Driver ON Resistance (Normal Mode)
I_INH = 50 mA
INH_ON

—
—
50
Current load capability
From 7.0 V < V_SUP < 18 V
I_{INH_LOAD}
mA
—
—
30
Leakage Current (Sleep Mode)
0 < V_INH < V_SUP
Overtemperature Shutdown⁽¹⁴⁾
Overtemperature Shutdown Hysteresis
WAKE INPUT PIN
I_LEAK
-5.0
—
A
5.0
T_INHSD
150
160
200
°C
T_{INHSD_HYS}
—
20
—
°C
High to Low Detection Threshold (5.5 V < V_SUP < 7 V)
V_WUHL1
2.0
—
3.9
V
Low to High Detection Threshold (5.5 V < V_SUP < 7 V)
V_WULH1
2.4
—
4.3
V
Hysteresis (5.5 V < V_SUP < 7 V)
V_WUHYS1
0.2
—
0.8
V
High to Low Detection Threshold (7 V  V_SUP < 27 V)
V_WUHL2
2.4
—
3.9
V
Low to High Detection Threshold (7 V  V_SUP < 27 V)
V_WULH2
2.9
—
4.3
V
Hysteresis (7 V  V_SUP < 27 V)
V_WUHYS2
0.2
—
0.8
V
Wake-up Input Current (V_WAKE < 27 V)
I_WU
—
—
5.0
µA
Notes
14. When an overtemperature shutdown occurs, the INH high side is switched off and the LIN transmitter and receiver are in recessive state.
This parameter is tested with a test mode on ATE and characterized at laboratory.
33662
10
Analog Integrated Circuit Device Data
Freescale Semiconductor