MC33662LEF Datasheet, PDF (13/31 Pages) Freescale Semiconductor, Inc – LIN 2.1 / SAEJ2602-2, LIN Physical Layer

ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
Table 6. Dynamic Electrical Characteristics (continued)
Characteristics under conditions 7.0 V  V_SUP  18 V, - 40C  T_A  125C, GND = 0 V, unless otherwise noted. Typical
values reflect the approximate parameter means at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
FAST BAUD RATE TIMING
EN Low Pulse Duration to Enter in Fast Baud Rate using Toggle Function ⁽³¹⁾
t₁
EN High to Low and Low to High
s
—
—
45
TXD Low Pulse Duration to Enter in Fast Baud Rate using Toggle Function ⁽³¹⁾
t₂
Delay Between EN Falling Edge and TXD Falling Edge to Enter in Fast Baud
Rate Using Toggle Function ⁽³¹⁾
t₃
12.5
—
12.5
—
—
µs
µs
—
Delay Between TXD Rising Edge and EN Rising Edge to Enter in Fast Baud
Rate Using Toggle Function ⁽³¹⁾
t₄
12.5
—
µs
—
RXD Low Level duration after EN rising edge to validate the Fast Baud Rate
entrance⁽³¹⁾
t₅
1.875
µs
6.25
Notes
31. See Figure 22 and 23
TIMING DIAGRAMS
V_SUP
VSUP
TXD
R₀
RXD
LIN
GND
C₀
Note R₀ and C₀: 1.0 k/1.0 nF, 660 /6.8 nF, and 500 /10 nF.
Figure 8. Test Circuit for Timing Measurements
Analog Integrated Circuit Device Data
Freescale Semiconductor
33662
13