K30P64M72SF1 Datasheet, PDF (33/68 Pages) Freescale Semiconductor, Inc – K30 Sub-Family

6.4.1.4
Peripheral operating requirements and behaviors
Reliability specifications
Table 21. NVM reliability specifications
Symbol Description
Min.
Program Flash
t_nvmretp10k Data retention after up to 10 K cycles
t_nvmretp1k Data retention after up to 1 K cycles
n_nvmcycp Cycling endurance
5
20
10 K
Data Flash
t_nvmretd10k Data retention after up to 10 K cycles
5
t_nvmretd1k Data retention after up to 1 K cycles
20
n_nvmcycd Cycling endurance
10 K
FlexRAM as EEPROM
t_nvmretee100 Data retention up to 100% of write endurance
t_nvmretee10 Data retention up to 10% of write endurance
Write endurance
n_nvmwree16
n_nvmwree128
n_nvmwree512
n_nvmwree4k
n_nvmwree8k
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio = 8192
5
20
35 K
315 K
1.27 M
10 M
20 M
Typ.¹
50
100
50 K
50
100
50 K
50
100
175 K
1.6 M
6.4 M
50 M
100 M
Max.
Unit
Notes
—
years
—
years
—
cycles
2
—
years
—
years
—
cycles
2
—
years
—
years
3
—
writes
—
writes
—
writes
—
writes
—
writes
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ T_j ≤ 125°C.
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
K30 Sub-Family Data Sheet, Rev. 2, 4/2012.
Freescale Semiconductor, Inc.
33