K30P64M72SF1 Datasheet, PDF (32/68 Pages) Freescale Semiconductor, Inc – K30 Sub-Family

Peripheral operating requirements and behaviors
Table 19. Flash command timing specifications (continued)
Symbol
t_setramff
t_setram8k
t_setram32k
Description
Set FlexRAM Function execution time:
• Control Code 0xFF
• 8 KB EEPROM backup
• 32 KB EEPROM backup
Min.
Typ.
Max.
Unit
—
50
—
μs
—
0.3
0.5
ms
—
0.7
1.0
ms
Byte-write to FlexRAM for EEPROM operation
t_eewr8bers Byte-write to erased FlexRAM location execution
—
175
260
μs
time
Byte-write to FlexRAM execution time:
t_eewr8b8k
t_eewr8b16k
t_eewr8b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
340
1700
μs
—
385
1800
μs
—
475
2000
μs
Word-write to FlexRAM for EEPROM operation
t_eewr16bers Word-write to erased FlexRAM location
execution time
—
175
260
μs
Word-write to FlexRAM execution time:
t_eewr16b8k
t_eewr16b16k
t_eewr16b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
340
1700
μs
—
385
1800
μs
—
475
2000
μs
Longword-write to FlexRAM for EEPROM operation
t_eewr32bers Longword-write to erased FlexRAM location
execution time
—
360
540
μs
Longword-write to FlexRAM execution time:
t_eewr32b8k
t_eewr32b16k
t_eewr32b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
545
1950
μs
—
630
2050
μs
—
810
2250
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
Notes
3
6.4.1.3 Flash current and power specfications
Table 20. Flash current and power specfications
Symbol
I_{DD_PGM}
Description
Worst case programming current in program flash
Typ.
Unit
10
mA
K30 Sub-Family Data Sheet, Rev. 2, 4/2012.
32
Freescale Semiconductor, Inc.