K51P81M100SF2 Datasheet, PDF (31/70 Pages) Freescale Semiconductor, Inc – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

6.4.1.2
Peripheral operating requirements and behaviors
Flash timing specifications — commands
Table 19. Flash command timing specifications
Symbol
t_rd1blk256k
Description
Read 1s Block execution time
• 256 KB data flash
Min.
—
Typ.
—
Max.
1.4
Unit
Notes
ms
t_rd1sec2k Read 1s Section execution time (flash sector)
—
—
40
μs
1
t_pgmchk Program Check execution time
—
—
35
μs
1
t_rdrsrc Read Resource execution time
—
—
35
μs
1
t_pgm4 Program Longword execution time
—
50
TBD
μs
Erase Flash Block execution time
2
t_ersblk256k
• 256 KB data flash
—
160
800
ms
t_ersscr Erase Flash Sector execution time
—
20
100
ms
2
Program Section execution time
t_pgmsec512
t_pgmsec1k
t_pgmsec2k
• 512 B flash
• 1 KB flash
• 2 KB flash
—
TBD
TBD
ms
—
TBD
TBD
ms
—
TBD
TBD
ms
t_rd1all Read 1s All Blocks execution time
—
—
2.8
ms
t_rdonce Read Once execution time
—
—
35
μs
1
t_pgmonce Program Once execution time
—
50
TBD
μs
t_ersall Erase All Blocks execution time
—
320
1600
ms
2
t_vfykey Verify Backdoor Access Key execution time
—
—
35
μs
1
Program Partition for EEPROM execution time
t_pgmpart256k
• 256 KB FlexNVM
—
175
TBD
ms
Set FlexRAM Function execution time:
t_setram32k
t_setram256k
• 32 KB EEPROM backup
• 256 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
TBD
ms
Byte-write to FlexRAM for EEPROM operation
t_eewr8bers Byte-write to erased FlexRAM location execution
—
100
TBD
μs
3
time
Byte-write to FlexRAM execution time:
t_eewr8b32k
t_eewr8b64k
t_eewr8b128k
t_eewr8b256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
1.5
ms
—
TBD
TBD
ms
—
TBD
2.5
ms
Word-write to FlexRAM for EEPROM operation
Table continues on the next page...
K51 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
Freescale Semiconductor, Inc.
Preliminary
31