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ISD-200 Datasheet, PDF (54/64 Pages) List of Unclassifed Manufacturers – USB Mass Storage Class Bulk-Only Specification Compliant
ISD-200 ASIC Datasheet
Device Errata for Second Silicon ISD-200 “0003”
100. nATA_Reset, nDIOR, and nDIOW allow parasitic current draw during
suspend
When suspended second silicon attempts to reduce suspend current and allow flexibility by three-stating
the three control lines nATA_Reset, nDIOR, and nDIOW. The cells leak about 2-3 uA that hold the cells
from going into a low power state. The extra 3.3v supply current per cell is around 200 uA when in this
high current consumption state. When there is a 1.5k pull-down in place, the cell draw much less current.
If all cells have been placed in the low current consumption state then total 3.3v supply current should be
around 200 nA. A weak pull-up could also be used to pull these signals up to reduce the 3.3v supply
current to about 12 uA.
101. CLKN does not get the correct frequency in all cases
The following table indicates the source of CLKN configuration. “X” means CLKN does not run. Note:
Columns indicate a sequence of actions from left to right. Rows indicate configuration source and
BUS_POWER pin state.
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In-System Design Confidential