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M12S128168A_08 Datasheet, PDF (4/45 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Synchronous DRAM
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ESMT
M12S128168A
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 3.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 °C )
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Symbol
Min
Typ
VDD, VDDQ
2.3
2.5
VIH
0.8xVDDQ
-
VIL
-0.3
0
VOH
VDDQ-0.2
-
VOL
-
-
IIL
-5
-
IOL
-5
-
Max
2.7
VDDQ+0.3
0.3
-
0.2
5
5
Note:
1. VIH(max) = 4.6V AC for pulse width ≤ 10ns acceptable.
2. VIL(min) = -1.5V AC for pulse width ≤ 10ns acceptable.
3. Any input 0V ≤ VIN ≤ VDD + 0.3V, all other pins are not under test = 0V.
4. Dout is disabled , 0V ≤ VOUT ≤ VDD.
Unit
V
V
V
V
V
μA
μA
Note
1
2
IOH = -0.1mA
IOL = 0.1mA
3
4
CAPACITANCE (VDD = 2.5V, TA = 25 °C , f = 1MHZ)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A11, BA0 ~ BA1)
CIN1
2.5
4
pF
Input capacitance
CIN2
2.5
4
pF
(CLK, CKE, CS , RAS , CAS , WE & L(U)DQM)
Data input/output capacitance (DQ0 ~ DQ15)
COUT
2
6.5
pF
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2008
Revision: 1.1
4/45
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