M12S128168A_08 Datasheet, PDF (28/45 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
M12S128168A
Single Bit Read-Write-Read Cycle(Same Page) @ CAS Latency = 3,Burst Length = 1
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2008
Revision: 1.1
28/45