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M12S128168A_08 Datasheet, PDF (36/45 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Synchronous DRAM | |||
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ESMT
Read & Write cycle with Auto Precharge @ Burst Length = 4
M12S128168A
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2008
Revision: 1.1
36/45
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