S1K70000 Datasheet, PDF (20/379 Pages) Epson Company – STANDARD CELL / EMBEDDED ARRAY

Chapter 1 Overview
Table 1-12 Electrical Characteristics
Parameter
Symbol
(V_DD or LV_DD = 1.8 V ± 0.15 V, V_SS = 0 V, T_a = -40 to +85°C)
Conditions
Min. Typ. Max. Unit
Input Leakage Current
I_LI
Off State Leakage
Current
I_OZ
—
-5 — 5 µA
—
-5 — 5 µA
High Level Output
Voltage
V_OH
I_OH = -0.75 mA (Type 1), -1.5 mA (Type 2)
-3 mA (Type 3), -4.5 mA (Type 4)
V_DD
—
—
V
V_DD = Min.
-0.4
Low Level Output
Voltage
I_OL = 0.75 mA (Type 1), 1.5 mA (Type 2)
V_OL
3 mA (Type 3), 4.5 mA (Type 4)
— — 0.4 V
V_DD = Min.
High Level Input Voltage V_IH1 LVCMOS Level, V_DD = Max.
1.04 — — V
Low Level Input Voltage V_IL1 LVCMOS Level, VDD = Min.
— — 0.49 Ｖ
High Level Input Voltage V_T1+ LVCMOS Schmitt
Low Level Input Voltage V_T1- LVCMOS Schmitt
0.5 — 1.1 V
0.2 — 1.0 Ｖ
Hysteresis Voltage
V_H1 LVCMOS Schmitt
0.01 — — V
Pull-up Resistance
P_PU V_I = 0 V
Type 1
Type 2
36 90 234 kΩ
72 180 468 kΩ
Pull-down Resistance
P_PD
V_I = V_DD
or LV_DD
Type 1
Type 2
36 90 234 kΩ
72 180 468 kΩ
High Level Maintenance
Current
Low Level Maintenance
Current
High Level Reversal
Current
Low Level Reversal
Current
I_BHH
I_BHL
I_BHHO
I_BHLO
Bus Hold
Response
Bus Hold
Response
Bus Hold
Response
Bus Hold
Response
V_IN = 1.04 V
V_DD = Min.
V_IN = 0.49 V
V_DD = Min.
V_IN = 0.49 V
V_DD = Max.
V_IN = 1.04 V
V_DD = Max.
— — -2 µA
— — 2 µA
-80 — — µA
80 — — µA
Input Terminal
Capacitance
C_I
f = 1 MHz, V_DD = 0 V
— — 8 pF
Output Terminal
Capacitance
C_O ^{f = 1 MHz, VDD = 0 V}
— — 8 pF
Input/Output Terminal
Capacitance
C_IO ^{f = 1 MHz, VDD = 0 V}
— — 8 pF
12
EPSON
STANDARD CELL S1K70000 SERIES
EMBEDDED ARRAY S1X70000 SERIES