BCM43362KUBG Datasheet, PDF (81/84 Pages) Cypress Semiconductor – Single-Chip IEEE 802.11™ b/g/n MAC/Baseband/Radio + SDIO

BCM43362 Data Sheet
Package Information
Section 15: Package Information
Package Thermal Characteristics
Table 28: Package Thermal Characteristics^a
Characteristic
Value in Still Air
_JA (°C/W)
_JB (°C/W)
_JC (°C/W)
_JT (°C/W)
_JB (°C/W)
Maximum Junction Temperature T_j (°C)^b
Maximum Power Dissipation (W)
44.88
1.20
0.20
0.04
14.21
125
1.2
a. No heat sink, TA = 70°C. This is an estimate based on a 4-layer PCB that conforms to EIA/JESD51–7 (101.6
mm x 114.3 mm x 1.6 mm) and P = 1.2W continuous dissipation.
b. Absolute junction temperature limits maintained through active thermal monitoring and dynamic Tx duty cycle
limiting.
Junction Temperature Estimation and PSI Versus Theta_jc
Package thermal characterization parameter PSI-JT (_JT) yields a better estimation of actual junction
temperature (T_J) versus using the junction-to-case thermal resistance parameter Theta-J_C (_JC). The reason for
this is _JC assumes that all the power is dissipated through the top surface of the package case. In actual
applications, some of the power is dissipated through the bottom and sides of the package. _JT takes into
account power dissipated through the top, bottom, and sides of the package. The equation for calculating the
device junction temperature is as follows:
T_J = T_T + P _JT
Where:
• T_J = junction temperature at steady-state condition, °C
• T_T = package case top center temperature at steady-state condition, °C
• P = device power dissipation, Watts
• _JT = package thermal characteristics (no airflow), °C/W
Broadcom_®
February 13, 2015 • 43362-DS106-R
IEEE 802.11 b/g/n MAC/Baseband/Radio + SDIO
Page 80
BROADCOM CONFIDENTIAL