PS-AT65609EHW Datasheet, PDF (9/30 Pages) ATMEL Corporation – MICROCIRCUIT, DIGITAL, MEMORY, 8K x 8-Bit, 5V Very Low Power CMOS SRAM, MONOLITHIC SILICON

PS-AT65609EHW
Rev A
6 ANNEXES
6.1 Electrical and timing characteristics
TABLE 1 - Electrical performances characteristics.
Test
Functional test 1
Nominal inputs
Functional test 2
Worst case inputs
Functional test 3
Worst case outputs
Functionnal test 4
Nominal inputs
Input clamp voltage to Vss
Low level input current
Symbol
-
-
-
-
VIC
IIL
Test method
Mil-Std-883
3014
3014
3014
3014
3008
3009
Conditions
-55°C ≤ T_C ≤ +125°C
+4.5 V ≤ Vcc ≤ +5.5 V
unless otherwise specified
Verify truth table
Note 1
Verify truth table
Note 1
Verify truth table
Note 1
Verify truth table
Note 1
Iin = -100 µA
Vcc open, Vss=0
Vcc=5.5V Vin=0V
High level input current
IIH
High impedance output
leakage current Third state 1,
low level
IOZL1
High impedance output
leakage current Third state 2,
low level
IOZL2
High impedance output
leakage current Third state 1,
high level
IOZH1
High impedance output
leakage current Third state 2,
high level
IOZH2
Low level output voltage
High level output voltage
Standby Supply Current
VOL
VOH
ICCSB
Standby Supply Current
ICCSB1
3010
-
-
-
3007
3006
3005
3005
Vcc=5.5V Vin=5.5V
Vin( CS1) = 4.5V
Vin(WE , OE ) = 4.5V
Vin(CE) = 0V
Vcc=5.5V
Vout=0V
Vin( CS1) = 0V
Vin(WE , OE ) = 4.5V
Vin(CE) = 4.5V
Vcc=5.5V
Vout=0V
Vin( CS1) = 4.5V
Vin(WE , OE ) = 4.5V
Vin(CE) = 0V
Vcc=5.5V
Vout=5.5V
Vin( CS1) = 0V
Vin(WE , OE ) =4.5V
Vin(CE) = 4.5V
Vcc=5.5V
Vout=5.5V
IOL=8mA Vcc=4.5V
Note 2
IOH=-4mA Vcc=4.5V
Note 3
CS1> VIH or CE< VIL and
CS1< VIL
CS1> Vcc-0.3V or
CE<GND+0.3V and CS1< 0.2V
Note 4
Limits
Min
Max ^Unit
-
-
-
-
-
-
-
-
-
-
-
-
-2
-0.2
V
-10
-
µA
-
10
µA
-10
-
µA
-10
-
µA
-
10
µA
-
10
µA
0.4
V
2.4
V
5
mA
3
mA
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