PS-AT65609EHW Datasheet, PDF (10/30 Pages) ATMEL Corporation – MICROCIRCUIT, DIGITAL, MEMORY, 8K x 8-Bit, 5V Very Low Power CMOS SRAM, MONOLITHIC SILICON

Test
Symbol
Dynamic Operating Current
ICCOP
Data Retention Current
ICCDR1
Vcc for data retention
Operation Recovery Time
Chip deselect to data retention
VCCDR
TR
TCDR
Input capacitance
Cin
Output capacitance
Cout
PS-AT65609EHW
Rev A
Test method
Mil-Std-883
3005
3005
-
-
-
3012
3012
Conditions
-55°C ≤ T_C ≤ +125°C
+4.5 V ≤ Vcc ≤ +5.5 V
unless otherwise specified
F=1/TAVAV, Iout=0 mA,
WE = OE =Vcc,
Vin = GND or Vcc,
Vcc max,
CS1 = VIL, CE= VIH,
Pattern = ICCACT
CS1 = Vcc or CE = CS1 =
GND, Vin = GND/Vcc, Vcc = 2V
Note 4
Note 5
Note 5
Vin = 0 V
T_C = 25°C f_IN = 1.0 MHz
Note 9
Vout = 0 V
T_C = 25°C f_IN = 1.0 MHz
Note 9
Limits
Min
Max
80
1.5
2.0
TAVAV
0.0
8
8
Unit
mA
mA
V
ns
ns
pF
pF
10/30