PS-AT65609EHW Datasheet, PDF (18/30 Pages) ATMEL Corporation – MICROCIRCUIT, DIGITAL, MEMORY, 8K x 8-Bit, 5V Very Low Power CMOS SRAM, MONOLITHIC SILICON

PS-AT65609EHW
Rev A
f) Genbl
Write 0 background
Write 1 background
Read 1 background with OE = VIL
Read 1 background with OE = VIH (must be fail)
6.2 Parameter drift values
TABLE 4 - Parameter drift values
Test
Low level Input current
High level Input
current
Output leakage Low
current
Output leakage High
current
Stand-by supply
current
Stand-by supply
current
Data retention
current
Symbol
I_IL
I_IH
I_OZL
I_OZH
I_CCSb
I_CCSb1
I_ccdr1
Test
method
Mil-Std-
883
As per
table 1
As per
table 1
As per
table 1
As per
table 1
As per
table 1
As per
table 1
As per
table 1
Conditions
As per table 1
As per table 1
As per table 1
As per table 1
As per table 1
As per table 1
As per table 1
Drift Unit
limits
1
μA
1
μA
1
μA
1
μA
0.5
mA
0.3
mA
0.15
mA
NOTE: the above parameter shall be recorded before and after burn-in and life test to determine the delta.
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