PS-AT65609EHW Datasheet, PDF(5/30 Page) ATMEL Corporation – MICROCIRCUIT, DIGITAL, MEMORY, 8K x 8-Bit, 5V Very Low Power CMOS SRAM, MONOLITHIC SILICON

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

PS-AT65609EHW Datasheet, PDF (5/30 Pages) ATMEL Corporation – MICROCIRCUIT, DIGITAL, MEMORY, 8K x 8-Bit, 5V Very Low Power CMOS SRAM, MONOLITHIC SILICON

◁

PS-AT65609EHW

Rev A

1 GENERAL

1.1 Scope

This specification details the ratings, physical and electrical characteristics, tests and inspection data of

the 8K x 8-Bit SRAM named AT65609EHW. It also defines the specific requirement for space and military

applications with high reliability.

1.2 Identification

Part number

Description

Access Case

Time

Level

AT65609EHW-CI40MQ 8K x 8-Bit SRAM 40 ns 28-lead DIL side-brazed 600 Mils Mil Level B

AT65609EHW-CI40SV 8K x 8-Bit SRAM 40 ns 28-lead DIL side-brazed 600 Mils Space Level B

AT65609EHW-CI40SR 8K x 8-Bit SRAM 40 ns 28-lead DIL side-brazed 600 Mils Space Level B RHA

1.3 Absolute maximum ratings

Supply voltage range (VCC)................................................. -0.5V to 7.0V DC(*)

DC Input voltage range (VIN)............................................... GND-0.3V to VCC + 0.3V(*)

DC Output voltage range (VOUT) ........................................ GND-0.3V to VCC + 0.3V(*)

Power dissipation (Pd) ....................................................... 0,6 W

Storage temperature........................................................... -65Â°C to 150Â°C(*)

Maximum junction temperature (TJ).................................... 175Â°C

Thermal resistance junction to case (Îjc) : . ...................... 7Â°C/W

Lead temperature (soldering @ 1/16 in, 10 s) ................... 300Â°C

NOTE (*) : Stresses beyond those listed under "Absolute Maximum Ratingsâ may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions beyond those indicated in the operational sections of this

specification are not implied. Exposure between recommended DC operating and absolute

maximum rating conditions for extended periods may affect device reliability.

1.4 Recommended operating conditions.

Supply voltage range (VCC)................................................. 4.5V DC to 5.5V DC

Ambient operating temperature (TA) .................................. -55Â°C to 125Â°C

Storage temperature........................................................... 30Â°C, 20 to 65% RH, dust free, original packing

1.5 Radiation features

Tested up to a Total Dose of .............................................. 300 krads (Si)

(according to MIL STD 883 Method 1019)

No Single Event Latch-up below a LET Threshold of ........ 80 MeV/mg/cm2 @ 125Â°C

1.6 Handling precautions

These components are susceptible to be damaged by electrostatic discharge. Therefore, suitable

precautions shall be employed for protection during all phases of manufacturing, testing, shipment and

any handling (MIL STD 883 Method 3015.3)

ESD (HBM) ........................................................................ > 4000 V

ESD (CDM) ........................................................................ > 1000 V

5/30

▷