W19B160BT Datasheet, PDF(43/48 Page) Winbond – 16Mbit, 2.7~3.6 volt CMOS flash memory

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W19B160BT Datasheet, PDF (43/48 Pages) Winbond – 16Mbit, 2.7~3.6 volt CMOS flash memory

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W19B160BT/B DATA SHEET

10.11 Alternate #CE Controlled Write (Erase/Program) Operation Timing

Address

#WE

#OE

#CE

DATA

#RESET

RY/#BY

555 for program

2AA for erase

TWC

TWH

TGHEL

PA for program

SA for sector erase

555 for chip erase

TAS TAH

#Data Polling

TCP

TWS

TCPH

TDS

TDH

TRH

A0 for program

55 for erase

TPW, TPB, ORT SE

TBUSY

PD for program

30 for sector erase

10 for chip erase

#DQ7 DOUT

Notes :

1. Firgure indicates last two bus cycles of a program or erase operation.

2. PA= program address, SA= sector address, PD= program data.

3. #DQ7 is the complement of the data written to the device. DOUT is the data written to the device.

4. Waveforms are for the word mode.

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Publication Release Date:Jan.04, 2008

Revision A5

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