W19B160BT Datasheet, PDF (22/48 Pages) Winbond – 16Mbit, 2.7~3.6 volt CMOS flash memory

W19B160BT/B DATA SHEET
8.6 Device Geometry Definition
DESCRIPTION
ADDRESS
(WORD MODE)
Device size =2^N bytes
27h
Flash device interface description (refer to CFI
28h
publication 100)
29h
Max. number of bytes in multi-byte write=2^N (00h=not
2Ah
supported)
2Bh
Number Of Erase Block Regions Within Devices
2Ch
2Dh
Erase block region 1 information
2Eh
(refer to the CFI specification or CFI publication 100 )
2Fh
30h
31h
32h
Erase Block Region 2 Information
33h
34h
35h
36h
Erase Block Region 3 Information
37h
38h
39h
3Ah
Erase Block Region 4 Information
3Bh
3Ch
DATA
0015h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
ADDRESS
(BYTE MODE)
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
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