W19B160BT Datasheet, PDF (37/48 Pages) Winbond – 16Mbit, 2.7~3.6 volt CMOS flash memory

W19B160BT/B DATA SHEET
9.4.9 Alternate #CE Controlled Erase and Program Operation
PARAMETER
SYM.
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write
(#OE High to #WE Low)
#WE Setup Time
#WE Hold Time
#CE Pulse Width
#CE Pulse Width High
Programming Time
(Note 6)
Byte
Word
Sector Erase Time (Note 2)
Chip Erase Time (Note 2)
Chip Program Time
(Note 5)
Byte
Word
TWC
TAS
TAH
TDS
TDH
TOES
TGHEL
TWS
TWH
TCP
TCPH
TPB
TPW
TSE
TCE
TCPB
TCPW
70nS
90nS
Min
Typ
Max
Min
Typ
Max
Unit
(Note 3) (Note 4)
(Note 3) (Note 4)
70
-
-
90
-
-
ns
0
-
-
0
-
-
ns
45
-
-
45
-
-
ns
35
-
-
45
-
-
ns
0
-
-
0
-
-
ns
0
-
-
0
-
-
ns
0
-
-
0
-
-
ns
0
-
0
-
35
-
30
-
-
5
-
7
-
0.7
-
25
-
11
-
7.2
-
0
-
-
0
-
-
35
-
-
30
-
-
-
5
-
-
7
-
-
0.7
-
-
25
-
-
11
-
-
7.2
-
ns
-
ns
-
ns
-
ns
-
us
-
-
sec
-
sec
-
sec
-
Notes :
1. Not 100 % tested.
2. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
3. Typical program and erase time assume the following conditions :25℃,3.0 V VDD, 10,000 cycles .Additionally,
programming typicals assume checkerboard pattern.
4. Under worst case conditions of 90℃, VDD =2.7V, 10,000 cycles.
5. The typical chip programming time is considerably less than the maximun chip programming time listed,since most
bytes program faster than maximun program times listed.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
7. The device has a minimum erase and program cycle endurance of 10,000 cycles.
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Publication Release Date:Jan.04, 2008
Revision A5