W19B160BT Datasheet, PDF (32/48 Pages) Winbond – 16Mbit, 2.7~3.6 volt CMOS flash memory

W19B160BT/B DATA SHEET
9.3 DC CHARACTERISTICS
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
Input Load Current
ILI
VIN =
(Max.)
VSS
to
VDD,
VDD
=
VDD
-
-
± 1.0 μA
A9 Input Load Current
ILIT
VDD =
(Max.)
VDD
(Max.),
A9
=
VID _-
-
35
μA
Output Leakage Current
ILO
VOUT = VSS to VDD ,
(Max.)
VDD =
VDD
-
-
± 1.0 μA
VDD Active Read Current
(Note 1,2)
#CE = VIL , #OE = VIH
Byte Mode
ICC1
#CE = VIL , #OE = VIH
Word Mode
10 MHz
5 MHz -
1 MHz
10 MHz
5 MHz
1 MHz
15 25
mA
9 16
mA
24
mA
18 25
mA
9 16
mA
24
mA
VDD Active Current
(Note 2,3,4)
ICC2 #CE = VIL , #OE = VIH
-
20 30
mA
VDD Standby Current
(Note 2,5)
ICC3 #RESET , #CE = VDD ± 0.3V
-
0.2 5
μA
VDD Reset Current (Note 2,5) ICC4 #RESET = VSS ± 0.3V
-
0.2 5
μA
Automatic Sleep Mode Current
(Note 2,4,5,6)
ICC5
VIH = VDD
0.3V
± 0.3V, VIL = VSS ± _-
0.2 5
μA
Input Low Voltage
VIL
-0.5
-
0.8
V
Input High Voltage
VIH
0.7 x VDD -
VDD+0.3 V
Voltage for Auto-select and
Temporary Sector Unprotected
VID
VDD =3.0V ± 10%
8.5
-
11.5
V
Output Low Voltage
VOL IOL = 4.0 mA, VDD = VDD (Min.) -
-
0.45
V
Output High Voltage
VOH1 IOL = -2.0 mA, VDD = VDD (Min.) 2.4
-
-
V
VOH2 IOH = -100 μA, VDD = VDD (Min.) VDD -0.4 -
-
V
Notes:
1. The I_CC current is typically less than 2 mA/MHz, with #OE at V_IH. Typical VDD is 3.0V.
2. Maximum I_CC specifications are tested with V_DD = V_DD max.
3. I_CC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC + 30 ns. Typical sleep mode
current is 200 nA.
5. For temperature >70 degree C, Vih(Max.)=Vdd+0.1V and Vil(Min)=Vss-0.1V.
6. Not 100% tested
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