W19B160BT Datasheet, PDF (34/48 Pages) Winbond – 16Mbit, 2.7~3.6 volt CMOS flash memory

W19B160BT/B DATA SHEET
9.4.3 Read-Only Operations
PARAMETER
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable Access Time
70nS
90nS
SYM. TEST Setup
Unit
Min. Max. Min. Max.
TRC
70 - 90 -
ns
TACC
#CE = VIL,
#OE = VIL
- 70 - 90 ns
TCE #OE = VIL
- 70 - 90 ns
TOE
- 30 - 35 ns
Chip Enable to Output High Z
TDF
- 25 - 30 ns
Output Enable to Output High Z
TDF
Output Hold Time From Address. #OE or
#CE Whichever Occurs First
TOH
Output Enable Hold
Time
Read
Toggle and #Data ^TOEH
polling
Note : Not 100 % tested
- 25 - 30 ns
0
-
0
-
ns
0
-
0
-
ns
10 - 10 -
ns
9.4.4 Read-Only Operations
Test Condition
Output Load
Output Load Capacitance, CL (including jig capacitance)
Input Rise and Fall Times
Input Pulse Levels
Input timing measurement reference levels
Output timing measurement reference levels
Note : Not 100 % tested
70nS
90nS
Unit
1 TTL gate
30
100
pF
5
ns
0 - 3.0
V
1.5
V
1.5
V
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