W19B160BT Datasheet, PDF (36/48 Pages) Winbond – 16Mbit, 2.7~3.6 volt CMOS flash memory

W19B160BT/B DATA SHEET
9.4.7 Erase and Program Operation
PARAMETER
Write Cycle Timing
Address setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recovery Time Before Write
(#OE High to #WE Low)
#CE Setup Time
#CE HOLD Time
Write Pulse Width
Write Pulse Width High
Programming Time
Byte
Word
Sector Erase Time
VDD Setup Time (Note 1)
Write Recovery Time from RY/#BY
Program/Erase Valid to RY/#BY Delay
Notes: Not 100 % tested
SYM.
TWC
TAS
TAH
TDS
TDH
TOES
TGHWL
TCS
TCH
TWP
TWPH
TPB
TPW
TSE
TVCS
TRB
TBUSY
70nS
90nS
Unit
Min. Typ. Max. Min. Typ. Max.
70 -
- 90
-
- ns
0
-
-
0
-
- ns
45 -
- 45
-
- ns
35 -
- 45
-
- ns
0
-
-
0
-
- ns
0
-
-
0
-
- ns
0
-
-
0
-
- ns
0
-
-
0
-
- ns
0
-
-
0
-
- ns
35 -
- 35
-
- ns
30 -
- 30
-
- ns
-
5 150 -
5 150 us
-
7 210 -
7 210 us
-
0.7 10
-
0.7 10 sec
50 -
- 50
-
- us
0
-
-
0
-
- ns
30 - 90 -
- 90 ns
9.4.8 Temporary Sector Unprotect
PARAMETER
VID Rise and Fall Time (See Note)
#RESET setup Time for Temporary Sector Unprotect
#RESET Hold Time from RY/#BY High for Temporary
Sector Unprotect
Note: Not 100 % tested
SYM.
TVIDR
TRSP
TRRB
MIN.
500
4
4
MAX.
-
-
-
UNIT
ns
us
s
- 36 -