W19B160BT Datasheet, PDF (21/48 Pages) Winbond – 16Mbit, 2.7~3.6 volt CMOS flash memory

W19B160BT/B DATA SHEET
8.4 CFI Query Identification String
DESCRIPTION
ADDRESS
DATA
(WORD MODE)
10h
0051h
Query-unique ASCII string "QRY"
11h
0052h
12h
0059h
Primary OEM Command Set
13h
0002h
14h
0000h
Address for Primary Extended Table
15h
0040h
16h
0000h
Alternate OEM Command Set (00h=none exists)
17h
0000h
18h
0000h
Address for Alternate OEM Extended Table (00h=none
19h
exists)
1Ah
0000h
0000h
ADDRESS
(BYTE MODE)
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
8.5 System Interface String
DESCRIPTION
VDD Min. (write/erase)
D7-D4: volt , D3-D0: 100 mV
VDD Max. (write/erase)
D7-D4: volt , D3-D0: 100 mV
VPP Min. voltage (00h=no Vpp pin present)
VPP Max. voltage (00h=no Vpp pin present)
Typical timeout per single byte/word write 2^N 　S
Typical timeout for Min. size buffer write 2^N 　S (00h=not
supported)
Typical timeout per individual block erase 2^N mS
Typical timeout for full chip erase 2^N mS (00h=not
supported)
Max. timeout for byte/word write 2^N times typical
Max. timeout for buffer write 2^N times typical
Max. timeout per individual block erase 2^N times typical
Max. timeout full chip erase 2^N times typical ( 00h = not
supported)
ADDRESS
DATA
(WORD MODE)
1Bh
0027h
1Ch
0036h
1Dh
0000h
1Eh
0000h
1Fh
0004h
20h
0000h
21h
000Ah
22h
0000h
23h
0005h
24h
0000h
25h
0004h
26h
0000h
ADDRESS
(BYTE MODE)
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
- 21 -
Publication Release Date:Jan.04, 2008
Revision A5