W25X05CLUXIG-TR Datasheet, PDF (41/47 Pages) Winbond – 1M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI

W25X10CL
AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL ALT
MIN
SPEC
TYP
MAX
UNIT
Output Hold Time
tCLQX
tHO
0
ns
/HOLD Active Setup Time relative to CLK
tHLCH
5
ns
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX⁽²⁾
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ⁽²⁾
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL⁽³⁾
20
ns
Write Protect Hold Time After /CS High
tSHWL⁽³⁾
100
ns
/CS High to Power-down Mode
tDP⁽²⁾
3
µs
/CS High to Standby Mode without Electronic
Signature Read
tRES1⁽²⁾
3
µs
/CS High to Standby Mode with Electronic
Signature Read
tRES2⁽²⁾
1.8
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) ⁽⁴⁾
t_BP1
Additional Byte Program Time (After First Byte) ⁽⁴⁾
t_BP2
Page Program Time
tPP
15
30
µs
2.5
5
µs
0.4
0.8
ms
Sector Erase Time (4KB)
tSE
30
300
ms
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time W25X10CL
tBE₁
120
800
ms
tBE₂
150 1,000 ms
tCE
0.25
1
s
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when SRP is set to 1.
4. For multiple bytes after first byte within a page, t_BPN = t_{BP1 +} t_{BP2 * N} (typical) and t_BPN = t_{BP1 +} t_{BP2 * N} (max), where N = number
of bytes programmed.
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Publication Release Date: February 17, 2014
Revision G