W25X05CLUXIG-TR Datasheet, PDF (38/47 Pages) Winbond – 1M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI

W25X10CL
9.4 DC Electrical Characteristics
PARAMETER
SYMBOL CONDITIONS
Input Capacitance
Output Capacitance
Input Leakage
I/O Leakage
Standby Current
Power-down Current
Current Read Data /
Dual Output 1MHz⁽²⁾
Current Read Data /
Dual Output 33MHz⁽²⁾
Current Read Data /
Dual Output 80MHz⁽²⁾
Current Read Data /
Dual Output 104MHz⁽²⁾
Current Write Status
Register
Current Page Program
Current Sector/Block
Erase
Current Chip Erase
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
CIN⁽¹⁾
Cout⁽¹⁾
ILI
ILO
ICC1
ICC2
ICC3
ICC3
ICC3
ICC3
ICC4
ICC5
ICC6
ICC7
VIL
VIH
VOL
VOH
VIN = 0V⁽²⁾
VOUT = 0V⁽²⁾
/CS = VCC,
VIN = GND or VCC
/CS = VCC,
VIN = GND or VCC
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
/CS = VCC
/CS = VCC
/CS = VCC
/CS = VCC
IOL = 100 µA
IOH = –100 µA
SPEC
MIN
TYP
MAX
6
8
±2
±2
10
50
1
5
1/3
4/8
4/5
8/10
5/6
10/12
6/7
12/14
8
10
10
10
–0.5
VCCx0.7
VCC–0.2
12
15
15
15
VCCx0.3
0.4
Notes:
1. Tested on sample basis and specified through design and characterization data. TA=25°C, VCC=3.0V.
2. Checker Board Pattern.
UNIT
pF
pF
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
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Publication Release Date: February 17, 2014
Revision G