W25X05CLUXIG-TR Datasheet, PDF (29/47 Pages) Winbond – 1M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI

W25X10CL
8.1.26 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC
Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“B9h” as shown in figure 19.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-
down instruction will not be executed. After /CS is driven high, the power-down state will entered
within the time duration of tDP (See AC Characteristics). While in the power-down state only the
Release from Power-down / Device ID instruction, which restores the device to normal operation, will
be recognized. All other instructions are ignored. This includes the Read Status Register instruction,
which is always available during normal operation. Ignoring all but one instruction makes the Power
Down state a useful condition for securing maximum write protection. The device always powers-up in
the normal operation with the standby current of ICC1.
/CS
CLK
Mode 3
Mode 0
DI
(IO₀)
01234567
Instruction (B9h)
tDP
Mode 3
Mode 0
Stand-by current
Power-down current
Figure 19. Deep Power-down Instruction Sequence Diagram
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Publication Release Date: February 17, 2014
Revision G