W25X05CLUXIG-TR Datasheet, PDF (25/47 Pages) Winbond – 1M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI

W25X10CL
8.1.22 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state
of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS
pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2).
The Sector Erase instruction sequence is shown in figure 15.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector
Erase instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. After the Sector Erase
cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector
Erase instruction will not be executed if the addressed page is protected by the Block Protect (TB,
BP1, and BP0) bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO₀)
DO
(IO₁)
Mode 3
0
Mode 0
* ^{= MSB}
123456789
29 30 31
Instruction (20h)
24-Bit Address
23 22
*
High Impedance
210
Mode 3
Mode 0
Figure 15. Sector Erase Instruction Sequence Diagram
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Publication Release Date: February 17, 2014
Revision G