V23990-P623-L82-D2-14 Datasheet, PDF (9/19 Pages) Vincotech – High efficiency dual boost

V23990-P623-L82-PM
INPUT BOOST ( T1 , T2 / D1 , D4 )
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
2,5
2
1,5
1
0,5
BOOST FWD
Q_{rr High T}
Q_{rr Low T}
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
1,8
1,5
1,2
0,9
0,6
0,3
0
0
At
10
20
30
40
50 _{I C (A)} 60
0
0
8
16
24
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/126 °C
400
V
15
V
8
Ω
Tj =
VR =
IF =
VGS =
25/126 °C
400
V
30
A
15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
75
60
45
30
15
BOOST FWD
I_{RRM High T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
80
60
I_{RRM Low T}
40
20
0
0
0
10
20
30
40
50 _{I C (A)} 60
0
8
16
24
At
T_j =
V_CE =
V_GE =
R_gon =
25/126 °C
400
V
15
V
8
Ω
At
T_j =
V_R =
I_F =
V_GS =
25/126 °C
400
V
30
A
15
V
BOOST FWD
Q_{rr High T}
Q_{rr Low T}
32
40
R Gon ( Ω)
BOOST FWD
I_{RRM High T}
I_{RRM Low T}
32
40
R Gon (Ω)
Copyright by Vincotech
9
Revision: 2.1