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V23990-P623-L82-D2-14 Datasheet, PDF (1/19 Pages) Vincotech – High efficiency dual boost
flow BOOST 0
Features
● High efficiency dual boost
● Ultra fast switching frequency
● Low Inductance Layout
● 650V IGBT and 650V Stealth Si boost diode
● Antiparallel IGBT protection diode with high current
Target Applications
● solar inverter
Types
● V23990-P623-L82-PM
V23990-P623-L82-PM
650V/50A
flow 0 12mm housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Bypass Diode ( D7 , D8 )
Repetitive peak reverse voltage
Forward average current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
Boost IGBT ( T1 , T2 )
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
VRRM
IFAV
IFSM
I2t
Ptot
Tjmax
Tj=Tjmax
tp=10ms
Tj=Tjmax
Th=80°C
Tc=80°C
Tj=25°C
Th=80°C
Tc=80°C
VCES
IC
ICpulse
Ptot
VGE
Tjmax
Tj=Tjmax
tp limited by Tjmax
Tj≤ 175°C, VCE≤ 650
Tj=Tjmax
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Value
Unit
1600
V
32
A
43
220
A
200
A2s
42
W
64
150
°C
650
V
43
A
57
150
A
150
A
84
W
128
±20
V
175
°C
Copyright by Vincotech
1
Revision: 2.1