V23990-P623-L82-D2-14 Datasheet, PDF (8/19 Pages) Vincotech – High efficiency dual boost

V23990-P623-L82-PM
Figure 9
Typical switching times as a
function of collector current
t = f(I_D)
1
0,1
0,01
INPUT BOOST ( T1 , T2 / D1 , D4 )
BOOST IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
t_doff
0,1
t_don
t_r
0,01
BOOST IGBT
t_doff
t_don
t_r
t_f
0,001
0
0,001
10
20
30
40
50 _{I D (A)} 60
0
8
16
24
With an inductive load at
T_j =
126
°C
V_DS =
400
V
V_GS =
15
V
R_gon =
8
Ω
R_goff =
8
Ω
With an inductive load at
T_j =
126
°C
V_DS =
400
V
V_GS =
15
V
I_C =
30
A
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,1
0,08
BOOST FWD
t_{rr High T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,1
0,08
0,06
0,06
0,04
0,04
t_{rr Low T}
0,02
0,02
0
0
10
20
30
40
50
I C (A) ⁶⁰
0
0
8
16
24
At
T_j =
V_CE =
V_GE =
R_gon =
25/126 °C
400
V
15
V
8
Ω
At
T_j =
V_R =
I_F =
V_GS =
25/126 °C
400
V
30
A
15
V
32
R G (Ω) ⁴⁰
BOOST FWD
t_{rr High T}
t_{rr Low T}
32 _{R Gon (Ω)} 40
Copyright by Vincotech
8
Revision: 2.1