V23990-P623-L82-D2-14 Datasheet, PDF (2/19 Pages) Vincotech – High efficiency dual boost

V23990-P623-L82-PM
Tj=25°C, unless otherwise specified
Parameter
Boost FWD ( D1, D4 )
Peak Repetitive Reverse Voltage
Forward average current
Surge forward current
I2t-value
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Boost Inverse Diode ( D9 , D10 )
Peak Repetitive Reverse Voltage
Forward average current
Surge forward current
I2t-value
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Thermal Properties
Storage temperature
Operation temperature under switching condition
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Maximum Ratings
Symbol
Condition
Value
Unit
V_RRM
I_FAV
I_FSM
I²t
I_FRM
P_tot
T_jmax
T_j=T_jmax
t_p=10ms
t_p limited by T_jmax
T_j=T_jmax
V_RRM
I_FAV
I_FSM
I²t
I_FRM
P_tot
T_jmax
T_c=25°C
T_j=T_jmax
t_p=10ms
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_j=25°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
T_j=25°C
T_h=80°C
T_c=80°C
650
V
51
A
64
225
A
250
A²s
100
A
88
W
134
175
°C
650
V
21
A
27
50
A
12,5
A²s
20
A
42
W
63
175
°C
T_stg
T_op
t=2s
DC voltage
-40…+125
°C
-40…+(Tjmax - 25)
°C
4000
V
min 12,7
mm
min 12,7
mm
Copyright by Vincotech
2
Revision: 2.1