V23990-P623-L82-D2-14 Datasheet, PDF (16/19 Pages) Vincotech – High efficiency dual boost

V23990-P623-L82-PM
Switching Definitions INPUT BOOST
Figure 5
Turn-off Switching Waveforms & definition of t_Eoff
125
%
100
I_{C 1%}
Input Boost IGBT
E_off
75
50
25
V_{GE 90%}
0
t_Eoff
-25
-0,1
0
0,1
P_off (100%) =
E_off (100%) =
t_Eoff =
12,00
kW
0,29
mJ
0,22
µs
P_off
0,2
0,3
time (us)
Figure 6
Turn-on Switching Waveforms & definition of t_Eon
200
%
E_on
Input Boost IGBT
150
P_on
100
50
V_{GE 10%}
0
t_Eon
-50
2,95
P_on (100%) =
E_on (100%) =
t_Eon =
3
3,05
12,00
kW
0,60
mJ
0,11
µs
V_{CE 3%}
3,1
time(us) ^3,15
Figure 7
Gate voltage vs Gate charge (measured)
20
15
10
5
0
-5
-20
0
V_GEoff =
V_GEon =
V_C (100%) =
I_C (100%) =
Q_g =
20
40
60
0
V
15
V
400
V
30
A
101
nC
Input Boost IGBT
80
100
120
Qg (nC)
Figure 8
Turn-off Switching Waveforms & definition of t_rr
150
%
I_d
100
t_rr
50
V_d
0
-50
Input Boost FWD
fitted
I_{RRM 10%}
-100
-150
-200
3
3,02
I_{RRM 90%}
I_{RRM 100%}
3,04
3,06
V_d (100%) =
I_d (100%) =
I_RRM (100%) =
t_rr =
400
V
30
A
-56
A
0,056
µs
3,08
3,1
time(us)
Copyright by Vincotech
16
Revision: 2.1