V23990-P623-L82-D2-14 Datasheet, PDF (7/19 Pages) Vincotech – High efficiency dual boost

V23990-P623-L82-PM
INPUT BOOST ( T1 , T2 / D1 , D4 )
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_D)
1,2
1
0,8
0,6
0,4
0,2
0
0
10
20
30
40
With an inductive load at
T_j =
V_DS =
V_GS =
R_gon =
R_goff =
25/126 °C
400
V
15
V
8
Ω
8
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E_rec = f(I_c)
0,5
0,4
0,3
0,2
0,1
0
0
10
20
30
40
With an inductive load at
T_j =
25/126 °C
V_DS =
400
V
V_GS =
15
V
R_gon =
8
Ω
R_goff =
8
Ω
BOOST IGBT
E_{on High T}
E_{on Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
1,2
1
0,8
0,6
E_{off High T}
0,4
E_{off Low T}
0,2
0
50 I _C (A) 60
0
8
16
24
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
25/126 °C
400
V
15
V
30
A
BOOST FWD
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,4
0,3
0,2
E_{rec Low T}
0,1
0
50
60
I C (A)
0
8
16
24
With an inductive load at
T_j =
25/126 °C
V_DS =
400
V
V_GS =
15
V
I_D =
30
A
BOOST IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
32
40
R_G (Ω)
BOOST FWD
E_{rec High T}
E_{rec Low T}
32 _{R G ( Ω )} 40
Copyright by Vincotech
7
Revision: 2.1