V23990-P623-L82-D2-14 Datasheet, PDF (4/19 Pages) Vincotech – High efficiency dual boost

V23990-P623-L82-PM
Parameter
Boost Inverse Diode ( D9 , D10 )
Diode forward voltage
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
Symbol
Characteristic Values
Conditions
V_GE [V] or
V_GS [V]
V_r [V] or
V_CE [V] or
V_DS [V]
I_C [A] or
I_F [A] or
I_D [A]
T_j
Value
Min
Typ
Max
Unit
V_F
R_thJH
Phase-Change
Material
20
Tj=25°C
1,00
1,67
2,00
Tj=125°C
1,54
V
2,28
K/W
R
∆R/R R100=1486 Ω
P
B(25/50)
B(25/100)
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
T=25°C
21511
Ω
-4,5
+4,5
%
210
mW
3,5
mW/K
3884
K
3964
K
F
Copyright by Vincotech
4
Revision: 2.1