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| V23990-P623-L82-D2-14 Datasheet, PDF (10/19 Pages) Vincotech – High efficiency dual boost | |||
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V23990-P623-L82-PM
INPUT BOOST ( T1 , T2 / D1 , D4 )
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
15000
12000
BOOST FWD
dIrec/dt
dI0/dt
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
15000
12000
BOOST FWD
dI0/dt
dIrec/dt
9000
9000
6000
6000
3000
3000
0
0
10
20
30
40
50 I C (A) 60
0
0
8
16
24
At
Tj =
VCE =
VGE =
Rgon =
25/126 °C
400
V
15
V
8
â¦
At
Tj =
VR =
IF =
VGS =
25/126 °C
400
V
30
A
15
V
Figure 19
IGBT/MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
BOOST IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
32 R Gon ( â¦) 40
BOOST FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,13
K/W
IGBT thermal model values
R (C/W)
7,12E-02
1,29E-01
4,31E-01
3,15E-01
1,31E-01
5,02E-02
Tau (s)
8,15E+00
6,00E-01
9,13E-02
2,59E-02
5,80E-03
8,53E-04
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,08
K/W
FWD thermal model values
R (C/W)
5,58E-02
1,01E-01
4,35E-01
2,93E-01
1,10E-01
8,25E-02
Tau (s)
4,07E+00
6,75E-01
9,24E-02
2,59E-02
4,04E-03
8,42E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
Copyright by Vincotech
10
Revision: 2.1
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