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| V23990-P623-L82-D2-14 Datasheet, PDF (3/19 Pages) Vincotech – High efficiency dual boost | |||
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V23990-P623-L82-PM
Parameter
Bypass Diode ( D7 , D8 )
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Boost IGBT ( T1 , T2 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Boost FWD ( D1, D4 )
Forward voltage
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
Thermal resistance chip to heatsink per chip
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Min
Typ
Max
Unit
VF
Vto
rt
Ir
RthJH
Phase-Change
Material
25
25
25
1500
Tj=25°C
0,8
1,21
1,9
Tj=125°C
1,19
V
Tj=25°C
0,92
Tj=125°C
0,80
V
Tj=25°C
Tj=125°C
0,012
0,015
â¦
Tj=25°C
Tj=125°C
0,05
mA
1,67
K/W
VGE(th) VGE=VCE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off)
Rgoff=8 â¦
15
tf
Rgon=8 â¦
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate
15
RthJH
Phase-Change
Material
0,0005
Tj=25°C
Tj=125°C
3,3
4
4,7
V
50
Tj=25°C
1
Tj=125°C
1,82
2,5
2,00
V
650
Tj=25°C
Tj=125°C
0,04
mA
0
Tj=25°C
Tj=125°C
200
nA
none
â¦
400
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
23
22
5
7
142
168
3
7
0,370
0,598
0,147
0,285
ns
mWs
3000
25
Tj=25°C
50
pF
11
520
50
Tj=25°C
120
nC
1,13
K/W
VF
Irm
IRRM
trr
Qrr Rgon=8 â¦
15
Erec
di(rec)max
/dt
RthJH
Phase-Change
Material
50
650
400
30
Tj=25°C
1
2,27
2,8
V
Tj=125°C
1,90
Tj=25°C
Tj=125°C
15
µA
Tj=25°C
40
Tj=125°C
56
A
Tj=25°C
19
Tj=125°C
56
ns
Tj=25°C
Tj=125°C
0,477
1,458
µC
Tj=25°C
Tj=125°C
0,053
0,281
mWs
Tj=25°C
Tj=125°C
8359
3588
A/µs
1,08
K/W
Copyright by Vincotech
3
Revision: 2.1
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