V23990-P623-L82-D2-14 Datasheet, PDF (12/19 Pages) Vincotech – High efficiency dual boost

V23990-P623-L82-PM
INPUT BOOST ( T1 , T2 / D1 , D4 )
Figure 25
Safe operating area as a function
of drain-source voltage
I_D = f(V_DS)
10³
BOOST IGBT
Figure 26
Gate voltage vs Gate charge
V_GS = f(Qg)
15
BOOST IGBT
12
10²
100uS
1
9
10mS
10¹
100mS
1mS
6
DC
10⁰
3
130V
520V
10^-1
10⁰
10¹
10²
At
D=
T_h =
V_GS =
T_j =
single pulse
80
ºC
15
V
T_jmax
ºC
10³
V DS (V)
0
0
20
40
60
80
100 _{Qg (nC)} 120
At
I_C =
50
A
Figure 29
Reverse bias safe operating area
I_C = f(V_CE)
125
100
I_{C MAX}
IGBT
75
50
25
0
0
100
200
300
400
500
At
T_j =
T_jmax-25 ºC
U_ccminus=U_ccplus
R_gon =
8
R_goff =
8
Switching mode :
3 level switching
600
700
V CE (V)
Ω
Ω
Copyright by Vincotech
12
Revision: 2.1